Technical parameters/rated power: 1 W
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 125 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.00 W
Technical parameters/breakdown voltage of gate source: ±20.0 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/width: 4.19 mm
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
Customs information/HTS code: 8541900000
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TN2540N3-G
|
Supertex | 类似代替 | TO-92-3 |
晶体管, MOSFET, 增强模式, N沟道, 175 mA, 400 V, 8 ohm, 10 V, 2 V
|
||
TN2540N3-G
|
Microchip | 类似代替 | TO-92-3 |
晶体管, MOSFET, 增强模式, N沟道, 175 mA, 400 V, 8 ohm, 10 V, 2 V
|
||
TN2640N3-G
|
Microchip | 类似代替 | TO-92-3 |
TO-92 N-CH 400V 0.22A
|
||
TN2640N3-G
|
Supertex | 类似代替 | TO-92-3 |
TO-92 N-CH 400V 0.22A
|
||
TP2640N3-G
|
Supertex | 类似代替 | TO-92-3 |
场效应管(MOSFET) TP2640N3-G TO-92-3
|
||
VN4012L-G
|
Supertex | 类似代替 | TO-92-3 |
Trans MOSFET N-CH 400V 0.16A 3Pin TO-92
|
||
VN4012L-G
|
Microchip | 类似代替 | TO-92-3 |
Trans MOSFET N-CH 400V 0.16A 3Pin TO-92
|
||
ZVP0545A
|
Diodes | 功能相似 | TO-92-3 |
DIODES INC. ZVP0545A 晶体管, MOSFET, P沟道, 45 mA, -450 V, 150 ohm, -10 V, -3 V
|
||
ZVP0545A
|
Diodes Zetex | 功能相似 | TO-92-3 |
DIODES INC. ZVP0545A 晶体管, MOSFET, P沟道, 45 mA, -450 V, 150 ohm, -10 V, -3 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review