Technical parameters/rated power: 1 W
Technical parameters/dissipated power: 1 W
Technical parameters/drain source voltage (Vds): 400 V
Technical parameters/rise time: 20 ns
Technical parameters/Input capacitance (Ciss): 110pF @25V(Vds)
Technical parameters/descent time: 65 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.21 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TP2640N3-G
|
Supertex | 类似代替 | TO-92-3 |
场效应管(MOSFET) TP2640N3-G TO-92-3
|
||
VN0550N3-G
|
Suptertex | 类似代替 |
Trans MOSFET N-CH 500V 0.05A 3Pin TO-92
|
|||
VP0550N3-G
|
Microchip | 类似代替 | TO-92-3 |
Trans MOSFET P-CH 500V 0.054A 3Pin TO-92
|
||
VP0550N3-G
|
Supertex | 类似代替 | TO-92-3 |
Trans MOSFET P-CH 500V 0.054A 3Pin TO-92
|
||
VP2450N3-G
|
Microchip | 类似代替 | TO-92-3 |
场效应管(MOSFET) VP2450N3-G TO-92-3
|
||
VP2450N3-G
|
Supertex | 类似代替 | TO-92-3 |
场效应管(MOSFET) VP2450N3-G TO-92-3
|
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