Technical parameters/frequency: 100MHz ~ 500MHz
Technical parameters/output power: 20 W
Technical parameters/gain: 10 dB
Technical parameters/test current: 200 mA
Technical parameters/rated voltage: 65 V
Encapsulation parameters/Encapsulation: -
External dimensions/packaging: -
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MRF136Y
|
M/A-Com | 功能相似 | 319B-02 |
N沟道MOS宽带射频功率场效应管 N-CHANNEL MOS BROADBAND RF POWER FET
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||
|
|
New Jersey Semiconductor | 功能相似 | 5 |
N沟道MOS宽带射频功率场效应管 N-CHANNEL MOS BROADBAND RF POWER FET
|
||
MRF166C
|
M/A-Com | 功能相似 | 319-07 |
MOSFET宽带射频功率FET MOSFET BROADBAND RF POWER FETs
|
||
MRF166C
|
M/A-Com | 功能相似 | 319-07 |
MOSFET宽带射频功率FET MOSFET BROADBAND RF POWER FETs
|
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