Technical parameters/frequency: | 30MHz ~ 500MHz |
|
Technical parameters/dissipated power: | 70 W |
|
Technical parameters/Leakage source breakdown voltage: | 65.0V (min) |
|
Technical parameters/output power: | 20 W |
|
Technical parameters/gain: | 13.5 dB |
|
Technical parameters/test current: | 25 mA |
|
Technical parameters/Input capacitance (Ciss): | 28pF @28V(Vds) |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 70000 mW |
|
Technical parameters/rated voltage: | 65 V |
|
Encapsulation parameters/installation method: | Flange |
|
Package parameters/number of pins: | 6 |
|
Encapsulation parameters/Encapsulation: | 319-07 |
|
Dimensions/Packaging: | 319-07 |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tray |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BLF245,112
|
NXP | 功能相似 | SOT-123 |
Trans RF MOSFET N-CH 65V 6A 4Pin SOT-123A Bulk
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||
MRF136Y
|
M/A-Com | 功能相似 | 319B-02 |
N沟道MOS宽带射频功率场效应管 N-CHANNEL MOS BROADBAND RF POWER FET
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||
|
|
New Jersey Semiconductor | 功能相似 | 5 |
N沟道MOS宽带射频功率场效应管 N-CHANNEL MOS BROADBAND RF POWER FET
|
||
MRF166C
|
M/A-Com | 功能相似 | 319-07 |
MOSFET宽带射频功率FET MOSFET BROADBAND RF POWER FETs
|
||
MRF166C
|
M/A-Com | 功能相似 | 319-07 |
MOSFET宽带射频功率FET MOSFET BROADBAND RF POWER FETs
|
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