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Model MRF136Y
Description N沟道MOS宽带射频功率场效应管 N-CHANNEL MOS BROADBAND RF POWER FET
Product QR code
Brand: M/A-Com
Packaging 319B-02
Delivery time
Packaging method Tray
Standard packaging quantity 1
590.48  yuan 590.48yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8296) Minimum order quantity(1)
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Technical parameters/frequency:

400 MHz

 

Technical parameters/rated current:

5 A

 

Technical parameters/dissipated power:

100000 mW

 

Technical parameters/Leakage source breakdown voltage:

65.0V (min)

 

Technical parameters/output power:

30 W

 

Technical parameters/gain:

14 dB

 

Technical parameters/test current:

25 mA

 

Technical parameters/dissipated power (Max):

100000 mW

 

Technical parameters/rated voltage:

65 V

 

Encapsulation parameters/installation method:

Flange

 

Package parameters/number of pins:

5

 

Encapsulation parameters/Encapsulation:

319B-02

 

Dimensions/Packaging:

319B-02

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tray

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MRF136 MRF136 ON Semiconductor 功能相似
射频MOSFET线15W ，频率400MHz ， 28V The RF MOSFET Line 15W, to 400MHz, 28V
MRF136 MRF136 M/A-Com 功能相似 211-07
射频MOSFET线15W ，频率400MHz ， 28V The RF MOSFET Line 15W, to 400MHz, 28V
PDF
MRF166C MRF166C M/A-Com 功能相似 319-07
MOSFET宽带射频功率FET MOSFET BROADBAND RF POWER FETs
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MRF166C MRF166C M/A-Com 功能相似 319-07
MOSFET宽带射频功率FET MOSFET BROADBAND RF POWER FETs
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