Technical parameters/frequency: 30MHz ~ 500MHz
Technical parameters/dissipated power: 70 W
Technical parameters/leakage source breakdown voltage: 65.0V (min)
Technical parameters/output power: 20 W
Technical parameters/gain: 13.5 dB
Technical parameters/test current: 25 mA
Technical parameters/Input capacitance (Ciss): 28pF @28V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 70000 mW
Technical parameters/rated voltage: 65 V
Encapsulation parameters/installation method: Flange
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: 319-07
External dimensions/packaging: 319-07
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BLF245,112
|
NXP | 功能相似 | SOT-123 |
Trans RF MOSFET N-CH 65V 6A 4Pin SOT-123A Bulk
|
||
MRF136Y
|
M/A-Com | 功能相似 | 319B-02 |
N沟道MOS宽带射频功率场效应管 N-CHANNEL MOS BROADBAND RF POWER FET
|
||
|
|
New Jersey Semiconductor | 功能相似 | 5 |
N沟道MOS宽带射频功率场效应管 N-CHANNEL MOS BROADBAND RF POWER FET
|
||
MRF166C
|
M/A-Com | 功能相似 | 319-07 |
MOSFET宽带射频功率FET MOSFET BROADBAND RF POWER FETs
|
||
MRF166C
|
M/A-Com | 功能相似 | 319-07 |
MOSFET宽带射频功率FET MOSFET BROADBAND RF POWER FETs
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review