Technical parameters/frequency: 400 MHz
Technical parameters/leakage source breakdown voltage: 65.0V (min)
Technical parameters/output power: 15 W
Technical parameters/gain: 16 dB
Technical parameters/test current: 25 mA
Technical parameters/Input capacitance (Ciss): 24pF @28V(Vds)
Technical parameters/dissipated power (Max): 55000 mW
Technical parameters/rated voltage: 65 V
Encapsulation parameters/installation method: Flange
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: 211-07
External dimensions/packaging: 211-07
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/ELV standards: Compliant
Customs Information/Hong Kong Import and Export License: NLR
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MRF137
|
FSL | 类似代替 | 211-07 |
N沟道MOS宽带射频功率场效应管 N-CHANNEL MOS BROADBAND RF POWER FET
|
||
MRF166C
|
M/A-Com | 功能相似 | 319-07 |
MOSFET宽带射频功率FET MOSFET BROADBAND RF POWER FETs
|
||
MRF166C
|
M/A-Com | 功能相似 | 319-07 |
MOSFET宽带射频功率FET MOSFET BROADBAND RF POWER FETs
|
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