Technical parameters/dissipated power: | 227 W |
|
Technical parameters/rise time: | 27 ns |
|
Technical parameters/descent time: | 35 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 35 W |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-220-3 |
|
Dimensions/Length: | 10.63 mm |
|
Dimensions/Width: | 4.83 mm |
|
Dimensions/Height: | 16.12 mm |
|
Dimensions/Packaging: | TO-220-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Product Lifecycle: | Unknown |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIHF22N60E-GE3
|
Vishay Semiconductor | 功能相似 | TO-220-3 |
VISHAY SIHF22N60E-GE3 功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 2 V
|
||
SIHF22N60E-GE3
|
Vishay Siliconix | 功能相似 | TO-220-3 |
VISHAY SIHF22N60E-GE3 功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 2 V
|
||
SPA20N60C3XKSA1
|
Infineon | 功能相似 | TO-220-3 |
INFINEON SPA20N60C3XKSA1 功率场效应管, MOSFET, N沟道, 20.7 A, 650 V, 0.16 ohm, 10 V, 3 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review