Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 35W (Tc)
Technical parameters/Input capacitance (Ciss): 1920pF @100V(Vds)
Technical parameters/dissipated power (Max): 35W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIHF22N60E-E3
|
Vishay Siliconix | 功能相似 | TO-220-3 |
VISHAY SIHF22N60E-E3 功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 2 V
|
||
SPA20N60C3XKSA1
|
Infineon | 功能相似 | TO-220-3 |
INFINEON SPA20N60C3XKSA1 功率场效应管, MOSFET, N沟道, 20.7 A, 650 V, 0.16 ohm, 10 V, 3 V
|
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