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Description MOSFET N-CH 600V 21A TO220
Product QR code
Packaging TO-220-3
Delivery time
Packaging method Bulk
Standard packaging quantity 1
14.16  yuan 14.16yuan
5+:
$ 16.5719
50+:
$ 15.8637
200+:
$ 15.4671
500+:
$ 15.3679
1000+:
$ 15.2688
2500+:
$ 15.1555
5000+:
$ 15.0847
7500+:
$ 15.0138
Quantity
5+
50+
200+
500+
1000+
Price
$16.5719
$15.8637
$15.4671
$15.3679
$15.2688
Price $ 16.5719 $ 15.8637 $ 15.4671 $ 15.3679 $ 15.2688
Start batch production 5+ 50+ 200+ 500+ 1000+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(7844) Minimum order quantity(5)
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Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 35W (Tc)

Technical parameters/Input capacitance (Ciss): 1920pF @100V(Vds)

Technical parameters/dissipated power (Max): 35W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Bulk

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: lead-free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SIHF22N60E-E3 SIHF22N60E-E3 Vishay Siliconix 功能相似 TO-220-3
VISHAY SIHF22N60E-E3 功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 2 V
PDF
SPA20N60C3XKSA1 SPA20N60C3XKSA1 Infineon 功能相似 TO-220-3
INFINEON SPA20N60C3XKSA1 功率场效应管, MOSFET, N沟道, 20.7 A, 650 V, 0.16 ohm, 10 V, 3 V
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