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Description INFINEON SPA20N60C3XKSA1 Power Field Effect Transistor, MOSFET, N-channel, 20.7 A, 650 V, 0.16 ohm, 10 V, 3 V
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Brand: Infineon
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
8.67  yuan 8.67yuan
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(5178) Minimum order quantity(1)
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Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.16 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

34.5 W

 

Technical parameters/threshold voltage:

3 V

 

Technical parameters/drain source voltage (Vds):

650 V

 

Technical parameters/Continuous drain current (Ids):

20.7A

 

Technical parameters/rise time:

5 ns

 

Technical parameters/Input capacitance (Ciss):

2400pF @25V(Vds)

 

Technical parameters/rated power (Max):

34.5 W

 

Technical parameters/descent time:

4.5 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

34.5W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-220-3

 

Dimensions/Length:

10.65 mm

 

Dimensions/Width:

4.85 mm

 

Dimensions/Height:

16.15 mm

 

Dimensions/Packaging:

TO-220-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Not Recommended for New Designs

 

Other/Packaging Methods:

Tube

 

Other/Manufacturing Applications:

Consumer Electronics, Computers & Computer Peripherals, Communications & Networking, Consumer Electronics, Power Man, Power Management, Computers& Computer Peripherals

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant

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