Technical parameters/number of channels: | 1 |
|
Technical parameters/number of pins: | 3 |
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Technical parameters/drain source resistance: | 0.15 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 35 W |
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Technical parameters/threshold voltage: | 2 V |
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Technical parameters/drain source voltage (Vds): | 600 V |
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Technical parameters/Leakage source breakdown voltage: | 600 V |
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Technical parameters/rise time: | 27 ns |
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Technical parameters/descent time: | 35 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | 55 ℃ |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Packaging Methods: | Tube |
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Other/Manufacturing Applications: | Industrial, Lighting, Alternative Energy, Motor Drive & Control, Portable Devices, Computers & Computer Peripherals, Communications & Networking, Power Management |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIHF22N60E-E3
|
Vishay Siliconix | 功能相似 | TO-220-3 |
VISHAY SIHF22N60E-E3 功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 2 V
|
||
SPA20N60C3XKSA1
|
Infineon | 功能相似 | TO-220-3 |
INFINEON SPA20N60C3XKSA1 功率场效应管, MOSFET, N沟道, 20.7 A, 650 V, 0.16 ohm, 10 V, 3 V
|
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