Technical parameters/drain source voltage (Vds): | 20 V |
|
Technical parameters/Input capacitance (Ciss): | 1200pF @10V(Vds) |
|
Technical parameters/rated power (Max): | 3.1 W |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | SOIC-8 |
|
Dimensions/Packaging: | SOIC-8 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Cut Tape (CT) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS6894A
|
Fairchild | 功能相似 | SOIC-8 |
双N沟道逻辑电平PWM优化的PowerTrench MOSFET Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
|
||
SI4966DY-T1-E3
|
Vishay Semiconductor | 类似代替 | SOIC-8 |
MOSFET, Power; Dual N-Ch; VDSS 20V; RDS(ON) 0.019Ω; ID +/-7.1A; SO-8; PD 2W; VGS +/-1
|
||
SI4966DY-T1-E3
|
VISHAY | 类似代替 | SOIC-8 |
MOSFET, Power; Dual N-Ch; VDSS 20V; RDS(ON) 0.019Ω; ID +/-7.1A; SO-8; PD 2W; VGS +/-1
|
||
|
|
Vishay Intertechnology | 类似代替 | SO-8 |
MOSFET DUAL N-CH 20V 6.2A 8-SOIC
|
||
SI9926BDY-T1-E3
|
Vishay Semiconductor | 类似代替 | SO-8 |
MOSFET DUAL N-CH 20V 6.2A 8-SOIC
|
||
SI9926CDY-T1-E3
|
VISHAY | 完全替代 | SOIC-8 |
MOSFET DUAL N-CH 20V 8A 8-SOIC
|
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