Technical parameters/polarity: | N-CH |
|
Technical parameters/dissipated power: | 125 W |
|
Technical parameters/drain source voltage (Vds): | 30 V |
|
Technical parameters/Continuous drain current (Ids): | 2A |
|
Technical parameters/rise time: | 9 ns |
|
Technical parameters/Input capacitance (Ciss): | 110pF @10V(Vds) |
|
Technical parameters/rated power (Max): | 1.25 W |
|
Technical parameters/descent time: | 4 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 600mW (Ta) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 6 |
|
Encapsulation parameters/Encapsulation: | TSOT-23-6 |
|
Dimensions/Packaging: | TSOT-23-6 |
|
Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI3456DDV-T1-E3
|
Vishay Siliconix | 功能相似 | TSOT-23-6 |
N通道30 -V （D -S ）的MOSFET N-Channel 30-V (D-S) MOSFET
|
||
|
|
Vishay Intertechnology | 功能相似 | TSOP |
N通道30 -V （D -S ）的MOSFET N-Channel 30-V (D-S) MOSFET
|
||
SI3456DDV-T1-GE3
|
VISHAY | 功能相似 | TSOP-6 |
N通道30 -V （D -S ）的MOSFET N-Channel 30-V (D-S) MOSFET
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review