Technical parameters/dissipated power: 1.7W (Ta), 2.7W (Tc)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Input capacitance (Ciss): 325pF @15V(Vds)
Technical parameters/dissipated power (Max): 1.7W (Ta), 2.7W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PMN45EN,135
|
NXP | 功能相似 | TSOP-457 |
N 通道 MOSFET,1A 至 9A,NXP Semiconductors ### MOSFET 晶体管,NXP Semiconductors
|
||
PMN45EN,135
|
Nexperia | 功能相似 | TSOP-6 |
N 通道 MOSFET,1A 至 9A,NXP Semiconductors ### MOSFET 晶体管,NXP Semiconductors
|
||
SI3456DDV-T1-E3
|
Vishay Siliconix | 类似代替 | TSOT-23-6 |
Single N-Channel 30V 0.04Ω 2.7W Surface Mount Power Mosfet - TSOP-6
|
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