Technical parameters/drain source resistance: | 33 mΩ |
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Technical parameters/dissipated power: | 1.7 W |
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Technical parameters/threshold voltage: | 1.2 V |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | TSOP |
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Dimensions/Packaging: | TSOP |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Packaging Methods: | Cut Tape (CT) |
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Compliant with standard/REACH SVHC version: | 2014/06/16 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDC653N
|
Fairchild | 功能相似 | TSOT-23-6 |
FAIRCHILD SEMICONDUCTOR FDC653N 晶体管, MOSFET, N沟道, 5 A, 30 V, 35 mohm, 10 V, 1.7 V
|
||
RTQ035N03TR
|
ROHM Semiconductor | 功能相似 | TSOT-23-6 |
N 通道 MOSFET 晶体管,ROHM ### MOSFET 晶体管,ROHM
|
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