Technical parameters/number of pins: 6
Technical parameters/drain source resistance: 33 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.7 W
Technical parameters/threshold voltage: 1.2 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 5A
Technical parameters/rise time: 13 ns
Technical parameters/Input capacitance (Ciss): 325pF @15V(Vds)
Technical parameters/rated power (Max): 2.7 W
Technical parameters/descent time: 11 ns
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOP-6
External dimensions/packaging: TSOP-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 3000
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDC653N
|
Fairchild | 功能相似 | TSOT-23-6 |
FAIRCHILD SEMICONDUCTOR FDC653N 晶体管, MOSFET, N沟道, 5 A, 30 V, 35 mohm, 10 V, 1.7 V
|
||
RTQ035N03TR
|
ROHM Semiconductor | 功能相似 | TSOT-23-6 |
N 通道 MOSFET 晶体管，ROHM ### MOSFET 晶体管，ROHM
|
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