Technical parameters/polarity: | N-CH |
|
Technical parameters/dissipated power: | 2 W |
|
Technical parameters/drain source voltage (Vds): | 100 V |
|
Technical parameters/Continuous drain current (Ids): | 1.5A |
|
Technical parameters/Input capacitance (Ciss): | 180pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 2 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | SOT-223 |
|
Dimensions/Packaging: | SOT-223 |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFL110
|
VISHAY | 类似代替 | SOT-223 |
MOSFET N-CH 100V 1.5A SOT223
|
||
IRFL110PBF
|
VISHAY | 完全替代 | TO-261-4 |
MOSFET N-CH 100V 1.5A SOT223
|
||
IRFL110PBF
|
Vishay Semiconductor | 完全替代 | SOT-223 |
MOSFET N-CH 100V 1.5A SOT223
|
||
IRFL110PBF
|
Vishay Siliconix | 完全替代 | TO-261-4 |
MOSFET N-CH 100V 1.5A SOT223
|
||
IRFL110PBF
|
Vishay Intertechnology | 完全替代 | TO-261 |
MOSFET N-CH 100V 1.5A SOT223
|
||
IRFL110PBF
|
International Rectifier | 完全替代 | SOT-223 |
MOSFET N-CH 100V 1.5A SOT223
|
||
|
|
Infineon | 完全替代 |
MOSFET N-CH 100V 1.5A SOT223
|
|||
IRFL110TRPBF
|
VISHAY | 完全替代 | TO-261-4 |
MOSFET N-CH 100V 1.5A SOT223
|
||
IRFL110TRPBF
|
International Rectifier | 完全替代 | SOT-223 |
MOSFET N-CH 100V 1.5A SOT223
|
||
IRFL110TRPBF
|
Infineon | 完全替代 |
MOSFET N-CH 100V 1.5A SOT223
|
|||
IRFL110TRPBF
|
Vishay Intertechnology | 完全替代 | SOT-223-3 |
MOSFET N-CH 100V 1.5A SOT223
|
||
NIF9N05CLT1G
|
ON Semiconductor | 功能相似 | TO-261-4 |
受保护的功率MOSFET Protected Power MOSFET
|
||
STN1NF10
|
ST Microelectronics | 功能相似 | TO-261-4 |
STMICROELECTRONICS STN1NF10 晶体管, MOSFET, N沟道, 500 mA, 100 V, 700 mohm, 10 V, 3 V
|
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