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Model NIF9N05CLT1G

Description Protected Power MOSFET

Brand: ON Semiconductor

Packaging TO-261-4

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	52.0 V
Technical parameters/rated current:	2.60 A
Technical parameters/drain source resistance:	0.125 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	1.69 W
Technical parameters/threshold voltage:	1.75 V
Technical parameters/drain source voltage (Vds):	59 V
Technical parameters/Leakage source breakdown voltage:	52.0 V
Technical parameters/breakdown voltage of gate source:	±15.0 V
Technical parameters/Continuous drain current (Ids):	2.60 A
Technical parameters/Input capacitance (Ciss):	250pF @35V(Vds)
Technical parameters/rated power (Max):	1.69 W
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	1.69W (Ta)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-261-4
Dimensions/Packaging:	TO-261-4
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2016/06/20
Customs information/ECCN code:	EAR99

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