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Model IRFL110PBF
Description VISHAY IRFL110PBF. Transistor, MOSFET, N-channel, 1.5 A, 100 V, 540 Mohm, 10 V, 4 V
Product QR code
Brand: Vishay Semiconductor
Packaging SOT-223
Delivery time
Packaging method Tube
Standard packaging quantity 1
1.81  yuan 1.81yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3684) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

100 V

 

Technical parameters/rated current:

1.50 A

 

Technical parameters/rated power:

3.1 W

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.54 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

3.1 W

 

Technical parameters/threshold voltage:

4 V

 

Technical parameters/Input capacitance:

180pF @25V

 

Technical parameters/drain source voltage (Vds):

100 V

 

Technical parameters/Leakage source breakdown voltage:

100 V

 

Technical parameters/Continuous drain current (Ids):

1.50 A

 

Technical parameters/rise time:

16 ns

 

Technical parameters/Input capacitance (Ciss):

180pF @25V(Vds)

 

Technical parameters/descent time:

9.4 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

2 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

SOT-223

 

Dimensions/Length:

6.7 mm

 

Dimensions/Width:

3.7 mm

 

Dimensions/Height:

1.45 mm

 

Dimensions/Packaging:

SOT-223

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Other/Packaging Methods:

Tube

 

Other/Manufacturing Applications:

Power Management

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standard

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