Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 2 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 1.5A
Technical parameters/Input capacitance (Ciss): 180pF @25V(Vds)
Technical parameters/rated power (Max): 2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/packaging: SOT-223
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NIF9N05CLT1G
|
ON Semiconductor | 功能相似 | TO-261-4 |
受保护的功率MOSFET Protected Power MOSFET
|
||
STN1NF10
|
ST Microelectronics | 功能相似 | TO-261-4 |
STMICROELECTRONICS STN1NF10 晶体管, MOSFET, N沟道, 500 mA, 100 V, 700 mohm, 10 V, 3 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review