Technical parameters/rated power: | 1.5 W |
|
Technical parameters/number of pins: | 8 |
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Technical parameters/drain source resistance: | 0.0059 Ω |
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Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 2.5 W |
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Technical parameters/threshold voltage: | 1.8 V |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Continuous drain current (Ids): | 15A |
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Technical parameters/Input capacitance (Ciss): | 2590pF @25V(Vds) |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 2.5W (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 4.98 mm |
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Dimensions/Width: | 3.99 mm |
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Dimensions/Height: | 1.57 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Not Recommended for New Designs |
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Other/Packaging Methods: | Tube |
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Other/Manufacturing Applications: | Battery Protection, Load Switch Low Side, Computers and computer peripherals, Power Management, Power Management, Computers& Computer Peripherals, Load Switch High Side |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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FAIRCHILD SEMICONDUCTOR FDS6673BZ 晶体管, MOSFET, P沟道, -14.5 A, -30 V, 0.0065 ohm, -10 V, -1.9 V
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IFC | 类似代替 |
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IRF9321TRPBF
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IFA | 类似代替 |
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SI4425BDY-T1-E3
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Vishay Siliconix | 功能相似 | SO-8 |
VISHAY SI4425BDY-T1-E3 晶体管, MOSFET, P沟道, -8.8 A, -30 V, 0.01 ohm, -10 V, -400 mV
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SI4425BDY-T1-E3
|
VISHAY | 功能相似 | SOIC-8 |
VISHAY SI4425BDY-T1-E3 晶体管, MOSFET, P沟道, -8.8 A, -30 V, 0.01 ohm, -10 V, -400 mV
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