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Specification parameters
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Technical parameters/number of pins:

Technical parameters/drain source resistance:

0.0065 Ω

Technical parameters/polarity:

P-Channel

Technical parameters/dissipated power:

2.5 W

Technical parameters/threshold voltage:

1.9 V

Technical parameters/drain source voltage (Vds):

30 V

Technical parameters/breakdown voltage of gate source:

±25.0 V

Technical parameters/Continuous drain current (Ids):

14.5 mA

Technical parameters/rise time:

16 ns

Technical parameters/Input capacitance (Ciss):

4700pF @15V(Vds)

Technical parameters/rated power (Max):

1 W

Technical parameters/descent time:

105 ns

Technical parameters/operating temperature (Max):

150 ℃

Technical parameters/operating temperature (Min):

-55 ℃

Technical parameters/dissipated power (Max):

2.5W (Ta)

Encapsulation parameters/installation method:

Surface Mount

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

SOIC-8

Dimensions/Length:

5 mm

Dimensions/Width:

4 mm

Dimensions/Height:

1.5 mm

Dimensions/Packaging:

SOIC-8

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

Other/Product Lifecycle:

Active

Other/Packaging Methods:

Tape & Reel (TR)

Compliant with standards/RoHS standards:

RoHS Compliant

Compliant with standards/lead standards:

Lead Free

Compliant with the REACH SVHC standard:

No SVHC

Compliant with standard/REACH SVHC version:

2015/06/15

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
FDS6679AZ	Rochester	类似代替	SOT	PowerTrench® P 通道 MOSFET，Fairchild Semiconductor PowerTrench® MOSFET 是优化的电源开关，可提高系统效率和功率密度。它们组合了小栅极电荷 (Qg)、小反向恢复电荷 (Qrr) 和软性反向恢复主体二极管，有助于快速切换交流/直流电源中的同步整流。最新的 PowerTrench® MOSFET 采用屏蔽栅极结构，可提供电荷平衡。利用这一先进技术，这些设备的 FOM（品质因素）显著低于之前的 FOM。 PowerTrench® MOSFET 的软性主体二极管性能可无需缓冲电路或替换更高额定电压的 MOSFET。 ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。	PDF
FDS6679AZ	Fairchild	类似代替	SOIC-8	PowerTrench® P 通道 MOSFET，Fairchild Semiconductor PowerTrench® MOSFET 是优化的电源开关，可提高系统效率和功率密度。它们组合了小栅极电荷 (Qg)、小反向恢复电荷 (Qrr) 和软性反向恢复主体二极管，有助于快速切换交流/直流电源中的同步整流。最新的 PowerTrench® MOSFET 采用屏蔽栅极结构，可提供电荷平衡。利用这一先进技术，这些设备的 FOM（品质因素）显著低于之前的 FOM。 PowerTrench® MOSFET 的软性主体二极管性能可无需缓冲电路或替换更高额定电压的 MOSFET。 ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。	PDF
IRF9321PBF	Infineon	功能相似	SOIC-8	INFINEON IRF9321PBF 晶体管, MOSFET, P沟道, -15 A, -30 V, 5.9 mohm, -10 V, -1.8 V	PDF

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ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
Tel: +86-0755-82866643