Technical parameters/rated voltage (DC): | 15.0 V |
|
Technical parameters/rated current: | 30.0 mA |
|
Technical parameters/dissipated power: | 0.35 W |
|
Technical parameters/breakdown voltage (collector emitter): | 15 V |
|
Technical parameters/rated power (Max): | 350 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-226-3 |
|
Dimensions/Packaging: | TO-226-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
CJ | 功能相似 | TO-92 |
NPN medium frequency transistor
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||
BF370
|
Philips | 功能相似 |
NPN medium frequency transistor
|
|||
BF370,112
|
NXP | 功能相似 | TO-226-3 |
SPT NPN 15V 0.1A
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MPS3646
|
ON Semiconductor | 功能相似 | TO-226-3 |
开关Trasnistor ( NPN硅) Switching Trasnistor(NPN Silicon)
|
||
MPS3646RLRAG
|
ON Semiconductor | 功能相似 | TO-226-3 |
TO-92 NPN 15V 0.3A
|
||
MPSW05G
|
ON Semiconductor | 功能相似 | TO-226-3 |
一瓦放大器晶体管 One Watt Amplifier Transistors
|
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