Technical parameters/frequency: | 50 MHz |
|
Technical parameters/rated voltage (DC): | 60.0 V |
|
Technical parameters/rated current: | 500 mA |
|
Technical parameters/polarity: | NPN |
|
Technical parameters/dissipated power: | 1 W |
|
Technical parameters/breakdown voltage (collector emitter): | 60 V |
|
Technical parameters/Maximum allowable collector current: | 0.5A |
|
Technical parameters/minimum current amplification factor (hFE): | 60 @250mA, 1V |
|
Technical parameters/rated power (Max): | 1 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 1000 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-226-3 |
|
Dimensions/Packaging: | TO-226-3 |
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Physical parameters/materials: | Silicon |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N4401BU
|
Fairchild | 功能相似 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR 2N4401BU 单晶体管 双极, NPN, 40 V, 250 MHz, 625 mW, 600 mA, 100 hFE
|
||
2N4401BU
|
ON Semiconductor | 功能相似 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR 2N4401BU 单晶体管 双极, NPN, 40 V, 250 MHz, 625 mW, 600 mA, 100 hFE
|
||
MPSW05
|
ON Semiconductor | 完全替代 | TO-226-3 |
一瓦放大器晶体管 One Watt Amplifier Transistors
|
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