Technical parameters/frequency: 250 MHz
Technical parameters/number of pins: 3
Technical parameters/dissipated power: 625 mW
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 1V
Technical parameters/rated power (Max): 625 mW
Technical parameters/DC current gain (hFE): 100
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Other/Manufacturing Applications: Industrial, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N4401BU
|
Fairchild | 类似代替 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR 2N4401BU 单晶体管 双极, NPN, 40 V, 250 MHz, 625 mW, 600 mA, 100 hFE
|
||
2N4401BU
|
ON Semiconductor | 类似代替 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR 2N4401BU 单晶体管 双极, NPN, 40 V, 250 MHz, 625 mW, 600 mA, 100 hFE
|
||
2N4401NLBU
|
Fairchild | 类似代替 | TO-92-3 |
Trans GP BJT NPN 40V 0.6A 3Pin TO-92 Bulk
|
||
2N4401NLBU
|
ON Semiconductor | 类似代替 | TO-92 |
Trans GP BJT NPN 40V 0.6A 3Pin TO-92 Bulk
|
||
2N4401TFR
|
ON Semiconductor | 完全替代 | TO-92-3 |
2N4401TFR 编带
|
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