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Model 2N4401NLBU

Description Trans GP BJT NPN 40V 0.6A 3Pin TO-92 Bulk

Brand: Fairchild

Packaging TO-92-3

Delivery time

Packaging method Bulk

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	40.0 V
Technical parameters/rated current:	600 mA
Technical parameters/polarity:	NPN
Technical parameters/dissipated power:	625 mW
Technical parameters/gain bandwidth product:	250 MHz
Technical parameters/breakdown voltage (collector emitter):	40 V
Technical parameters/Maximum allowable collector current:	0.6A
Technical parameters/minimum current amplification factor (hFE):	100 @150mA, 1V
Technical parameters/maximum current amplification factor (hFE):	300
Technical parameters/rated power (Max):	625 mW
Technical parameters/DC current gain (hFE):	20
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	55 ℃
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-92-3
Dimensions/Length:	4.58 mm
Dimensions/Width:	3.86 mm
Dimensions/Height:	4.58 mm
Dimensions/Packaging:	TO-92-3
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Obsolete
Other/Packaging Methods:	Bulk
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/06/15
Customs information/ECCN code:	EAR99

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
2N4401BU	Fairchild	类似代替	TO-226-3	FAIRCHILD SEMICONDUCTOR 2N4401BU 单晶体管双极, NPN, 40 V, 250 MHz, 625 mW, 600 mA, 100 hFE	PDF
2N4401BU	ON Semiconductor	类似代替	TO-92-3	FAIRCHILD SEMICONDUCTOR 2N4401BU 单晶体管双极, NPN, 40 V, 250 MHz, 625 mW, 600 mA, 100 hFE	PDF
2N4401RLRAG	ON Semiconductor	功能相似	TO-92-3	ON SEMICONDUCTOR 2N4401RLRAG 双极晶体管	PDF