Technical parameters/rated voltage (DC): | 15.0 V |
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Technical parameters/rated current: | 300 mA |
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Technical parameters/polarity: | NPN |
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Technical parameters/breakdown voltage (collector emitter): | 15 V |
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Technical parameters/Maximum allowable collector current: | 0.3A |
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Technical parameters/rated power (Max): | 625 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | TO-226-3 |
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Dimensions/Packaging: | TO-226-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
CJ | 功能相似 | TO-92 |
NPN中频晶体管 NPN medium frequency transistor
|
||
BF370
|
Philips | 功能相似 |
NPN中频晶体管 NPN medium frequency transistor
|
|||
BF370,112
|
NXP | 功能相似 | TO-226-3 |
SPT NPN 15V 0.1A
|
||
|
|
Philips | 功能相似 |
0.5W(1/2W) High Voltage NPN Plastic Leaded Transistor. 15V Vceo, 0.1A Ic, 40 hFE
|
|||
BF370R
|
NXP | 功能相似 | TO-92 |
0.5W(1/2W) High Voltage NPN Plastic Leaded Transistor. 15V Vceo, 0.1A Ic, 40 hFE
|
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