Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 15 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 40 @10mA, 1V
Technical parameters/rated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MPS3646
|
ON Semiconductor | 功能相似 | TO-226-3 |
开关Trasnistor ( NPN硅) Switching Trasnistor(NPN Silicon)
|
||
MPS3646RLRAG
|
ON Semiconductor | 功能相似 | TO-226-3 |
TO-92 NPN 15V 0.3A
|
||
PN3646
|
Freescale | 功能相似 |
NPN开关晶体管 NPN Switching Transistor
|
|||
PN3646
|
Fairchild | 功能相似 | TO-226-3 |
NPN开关晶体管 NPN Switching Transistor
|
||
PN3646
|
Central Semiconductor | 功能相似 | TO-92 |
NPN开关晶体管 NPN Switching Transistor
|
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