Technical parameters/polarity: | PNP, P-Channel |
|
Technical parameters/dissipated power: | 250 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
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Technical parameters/Maximum allowable collector current: | 500mA |
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Technical parameters/minimum current amplification factor (hFE): | 33 |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-236 |
|
Dimensions/Length: | 3 mm |
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Dimensions/Width: | 1.4 mm |
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Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | TO-236 |
|
Other/Product Lifecycle: | Unknown |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PDTB113EK
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TO-236AB PNP 50V 500mA
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NXP | 功能相似 | MPAK |
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