Technical parameters/number of channels: | 2 |
|
Technical parameters/dissipated power: | 0.25 W |
|
Technical parameters/drain source voltage (Vds): | 20 V |
|
Technical parameters/rise time: | 4 ns |
|
Technical parameters/Input capacitance (Ciss): | 150pF @16V(Vds) |
|
Technical parameters/rated power (Max): | 250 mW |
|
Technical parameters/descent time: | 8 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 250 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 6 |
|
Encapsulation parameters/Encapsulation: | SOT-563-6 |
|
Dimensions/Packaging: | SOT-563-6 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTZD3154NT1G
|
ON Semiconductor | 类似代替 | SOT-563-6 |
ON SEMICONDUCTOR NTZD3154NT1G. 场效应管, MOSFET
|
||
NTZD3154NT2G
|
ON Semiconductor | 类似代替 | SOT-563-6 |
0.54A,20V,双N沟道功率MOSFET
|
||
NTZD3154NT5G
|
ON Semiconductor | 类似代替 | SOT-563-6 |
0.54A,20V,双N沟道MOSFET
|
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