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Technical parameters/rated voltage (DC):	20.0 V
Technical parameters/rated current:	540 mA
Technical parameters/number of channels:	2
Technical parameters/number of pins:	6
Technical parameters/drain source resistance:	0.4 Ω
Technical parameters/polarity:	Dual N-Channel
Technical parameters/dissipated power:	250 mW
Technical parameters/threshold voltage:	1 V
Technical parameters/Input capacitance:	80 pF
Technical parameters/drain source voltage (Vds):	20 V
Technical parameters/Leakage source breakdown voltage:	20.0 V
Technical parameters/breakdown voltage of gate source:	±6.00 V
Technical parameters/Continuous drain current (Ids):	540 mA
Technical parameters/rise time:	4 ns
Technical parameters/Input capacitance (Ciss):	150pF @16V(Vds)
Technical parameters/rated power (Max):	250 mW
Technical parameters/descent time:	8 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	280 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	6
Encapsulation parameters/Encapsulation:	SOT-563-6
Dimensions/Length:	1.7 mm
Dimensions/Width:	1.2 mm
Dimensions/Packaging:	SOT-563-6
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
NTZD3154NT1H	ON Semiconductor	类似代替	SOT-563-6	Trans MOSFET N-CH 20V 0.54A 6Pin SOT-563 T/R	PDF
NTZD3154NT2G	ON Semiconductor	类似代替	SOT-563-6	0.54A,20V,双N沟道功率MOSFET	PDF
NTZD3154NT5G	ON Semiconductor	类似代替	SOT-563-6	0.54A,20V,双N沟道MOSFET	PDF

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