Technical parameters/drain source resistance: | 400 mΩ |
|
Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 250 mW |
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Technical parameters/drain source voltage (Vds): | 20 V |
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Technical parameters/Leakage source breakdown voltage: | 20.0 V |
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Technical parameters/Continuous drain current (Ids): | 540 mA |
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Technical parameters/Input capacitance (Ciss): | 150pF @16V(Vds) |
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Technical parameters/rated power (Max): | 250 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SOT-563-6 |
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Dimensions/Packaging: | SOT-563-6 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTZD3154NT1G
|
ON Semiconductor | 类似代替 | SOT-563-6 |
ON SEMICONDUCTOR NTZD3154NT1G. 场效应管, MOSFET
|
||
NTZD3154NT1H
|
ON Semiconductor | 类似代替 | SOT-563-6 |
Trans MOSFET N-CH 20V 0.54A 6Pin SOT-563 T/R
|
||
NTZD3154NT5G
|
ON Semiconductor | 类似代替 | SOT-563-6 |
0.54A,20V,双N沟道MOSFET
|
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