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Model 2SK3065T100
Description ROHM 2SK3065T100 Transistor, MOSFET, N-channel, 2 A, 60 V, 250 Mohm, 4 V, 800 mV
Product QR code
Brand: ROHM Semiconductor
Packaging SOT-89-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.63  yuan 0.63yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4519) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

60.0 V

 

Technical parameters/rated current:

2.00 A

 

Technical parameters/number of channels:

1

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

250 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

500 mW

 

Technical parameters/threshold voltage:

800 mV

 

Technical parameters/drain source voltage (Vds):

60 V

 

Technical parameters/Leakage source breakdown voltage:

60 V

 

Technical parameters/Continuous drain current (Ids):

2.00 A

 

Technical parameters/rise time:

50 ns

 

Technical parameters/Input capacitance (Ciss):

160pF @10V(Vds)

 

Technical parameters/rated power (Max):

500 mW

 

Technical parameters/descent time:

70 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

55 ℃

 

Technical parameters/dissipated power (Max):

500mW (Ta)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

SOT-89-3

 

Dimensions/Length:

4.5 mm

 

Dimensions/Width:

2.5 mm

 

Dimensions/Height:

1.5 mm

 

Dimensions/Packaging:

SOT-89-3

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

150℃ (TJ)

 

Other/Product Lifecycle:

Not Recommended for New Designs

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufa

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