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Model RHP020N06T100

Description 4V驱动N沟道MOSFET 4V Drive Nch MOSFET

Brand: ROHM Semiconductor

Packaging SOT-89-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	60.0 V
Technical parameters/rated current:	2.00 A
Technical parameters/number of channels:	1
Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.34 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	2 W
Technical parameters/threshold voltage:	2.5 V
Technical parameters/drain source voltage (Vds):	60 V
Technical parameters/Leakage source breakdown voltage:	60.0 V
Technical parameters/Continuous drain current (Ids):	200 mA
Technical parameters/rise time:	10 ns
Technical parameters/Input capacitance (Ciss):	140pF @10V(Vds)
Technical parameters/rated power (Max):	500 mW
Technical parameters/descent time:	18 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/dissipated power (Max):	500mW (Ta)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	4
Encapsulation parameters/Encapsulation:	SOT-89-3
Dimensions/Width:	2.5 mm
Dimensions/Packaging:	SOT-89-3
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free

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