Technical parameters/rated power: | 2.9 W |
|
Technical parameters/number of pins: | 8 |
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Technical parameters/drain source resistance: | 0.011 Ω |
|
Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 1.85 W |
|
Technical parameters/drain source voltage (Vds): | -40.0 V |
|
Technical parameters/Continuous drain current (Ids): | -8.70 A |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 1500 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
|
Dimensions/Height: | 1.55 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | Power Management, Industrial |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2015/06/15 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7240TRPBF
|
International Rectifier | 功能相似 | SOIC-8 |
INFINEON IRF7240TRPBF 晶体管, MOSFET, P沟道, -10.5 A, -40 V, 0.015 ohm, -10 V, -3 V
|
||
IRF7240TRPBF
|
Infineon | 功能相似 | SOIC-8 |
INFINEON IRF7240TRPBF 晶体管, MOSFET, P沟道, -10.5 A, -40 V, 0.015 ohm, -10 V, -3 V
|
||
SI4401DDY-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOIC-8 |
VISHAY SI4401DDY-T1-GE3 晶体管, MOSFET, P沟道, -16.1 A, -40 V, 0.018 ohm, -4.5 V, -1.2 V
|
||
SI4401DDY-T1-GE3
|
VISHAY | 类似代替 | SOIC-8 |
VISHAY SI4401DDY-T1-GE3 晶体管, MOSFET, P沟道, -16.1 A, -40 V, 0.018 ohm, -4.5 V, -1.2 V
|
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