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Model SI4401DDY-T1-GE3
Description -40V,-16.1A,PChannel MOSFET
Product QR code
Brand: VISHAY
Packaging SOIC-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.39  yuan 1.39yuan
5+:
$ 1.8765
25+:
$ 1.7375
50+:
$ 1.6402
100+:
$ 1.5985
500+:
$ 1.5707
2500+:
$ 1.5360
5000+:
$ 1.5221
10000+:
$ 1.5012
Quantity
5+
25+
50+
100+
500+
Price
$1.8765
$1.7375
$1.6402
$1.5985
$1.5707
Price $ 1.8765 $ 1.7375 $ 1.6402 $ 1.5985 $ 1.5707
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5346) Minimum order quantity(5)
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Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 0.018 Ω

Technical parameters/polarity: P-Channel

Technical parameters/dissipated power: 2.5 W

Technical parameters/threshold voltage: 1.2 V

Technical parameters/drain source voltage (Vds): 40 V

Technical parameters/Continuous drain current (Ids): 16.1A

Technical parameters/rise time: 11 ns

Technical parameters/Input capacitance (Ciss): 3007pF @20V(Vds)

Technical parameters/rated power (Max): 6.3 W

Technical parameters/descent time: 9 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 2.5W (Ta), 6.3W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC-8

External dimensions/packaging: SOIC-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Other/Minimum Packaging: 2500

Other/Manufacturing Applications: Power Management, Industrial

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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SI4401BDY-T1-E3 SI4401BDY-T1-E3 Vishay Semiconductor 类似代替 SOIC-8
VISHAY SI4401BDY-T1-E3 场效应管, MOSFET, P沟道, -40V, 8.7A, SOIC-8, 整卷
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VISHAY SI4401BDY-T1-E3 场效应管, MOSFET, P沟道, -40V, 8.7A, SOIC-8, 整卷
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