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Model SI4401DDY-T1-GE3
Description VISHAY SI4401DDY-T1-GE3 晶体管, MOSFET, P沟道, -16.1 A, -40 V, 0.018 ohm, -4.5 V, -1.2 V
Product QR code
Brand: Vishay Semiconductor
Packaging SOIC-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.54  yuan 1.54yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1031) Minimum order quantity(1)
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Technical parameters/number of pins:

8

 

Technical parameters/drain source resistance:

0.018 Ω

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

6.3 W

 

Technical parameters/operating temperature (Max):

150 ℃

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SOIC-8

 

Dimensions/Packaging:

SOIC-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Industrial, Power Management

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with the REACH SVHC standard:

No SVHC

 

Compliant with standard/REACH SVHC version:

2015/06/15

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRF7240TRPBF IRF7240TRPBF International Rectifier 功能相似 SOIC-8
INFINEON IRF7240TRPBF 晶体管, MOSFET, P沟道, -10.5 A, -40 V, 0.015 ohm, -10 V, -3 V
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IRF7240TRPBF IRF7240TRPBF Infineon 功能相似 SOIC-8
INFINEON IRF7240TRPBF 晶体管, MOSFET, P沟道, -10.5 A, -40 V, 0.015 ohm, -10 V, -3 V
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SI4401BDY-T1-E3 SI4401BDY-T1-E3 Vishay Semiconductor 类似代替 SOIC-8
VISHAY SI4401BDY-T1-E3 场效应管, MOSFET, P沟道, -40V, 8.7A, SOIC-8, 整卷
PDF
SI4401BDY-T1-E3 SI4401BDY-T1-E3 VISHAY 类似代替 SOIC-8
VISHAY SI4401BDY-T1-E3 场效应管, MOSFET, P沟道, -40V, 8.7A, SOIC-8, 整卷
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SI4401BDY-T1-E3 SI4401BDY-T1-E3 Vishay Intertechnology 类似代替 SOIC-8
VISHAY SI4401BDY-T1-E3 场效应管, MOSFET, P沟道, -40V, 8.7A, SOIC-8, 整卷
PDF

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