Technical parameters/dissipated power: | 2W (Ta), 3.1W (Tc) |
|
Technical parameters/drain source voltage (Vds): | 60 V |
|
Technical parameters/Input capacitance (Ciss): | 300pF @25V(Vds) |
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Technical parameters/rated power (Max): | 2 W |
|
Technical parameters/dissipated power (Max): | 2W (Ta), 3.1W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | TO-261-4 |
|
Dimensions/Packaging: | TO-261-4 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Cut Tape (CT) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFL014
|
Vishay Intertechnology | 类似代替 | SOT-223-3 |
MOSFET N-CH 60V 2.7A SOT223
|
||
IRFL014
|
Vishay Siliconix | 类似代替 | SOT-223-3 |
MOSFET N-CH 60V 2.7A SOT223
|
||
IRFL014PBF
|
Vishay Precision Group | 完全替代 | SOT-223 |
MOSFET N-CH 60V 2.7A SOT223
|
||
IRFL014PBF
|
IRF | 完全替代 |
MOSFET N-CH 60V 2.7A SOT223
|
|||
IRFL014PBF
|
VISHAY | 完全替代 | TO-261-4 |
MOSFET N-CH 60V 2.7A SOT223
|
||
IRFL014PBF
|
LiteOn | 完全替代 | SOT-223-3 |
MOSFET N-CH 60V 2.7A SOT223
|
||
IRFL014PBF
|
Vishay Siliconix | 完全替代 | TO-261-4 |
MOSFET N-CH 60V 2.7A SOT223
|
||
IRFL014TR
|
VISHAY | 完全替代 | SOT-223 |
MOSFET N-CH 60V 2.7A SOT223
|
||
NDT3055L
|
ON Semiconductor | 功能相似 | TO-261-4 |
FAIRCHILD SEMICONDUCTOR NDT3055L 晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 1.6 V
|
||
NTF3055L108T1G
|
Rochester | 功能相似 |
N 通道功率 MOSFET,60V,ON Semiconductor
|
|||
STN3NF06L
|
ST Microelectronics | 功能相似 | TO-261-4 |
STMICROELECTRONICS STN3NF06L 晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 2.8 V
|
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