Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 2.70 A
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.2 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/Continuous drain current (Ids): 2.70 A
Technical parameters/rise time: 50.0 ns
Technical parameters/Input capacitance (Ciss): 300pF @25V(Vds)
Technical parameters/rated power (Max): 2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/length: 6.7 mm
External dimensions/width: 3.7 mm
External dimensions/height: 1.45 mm
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Industrial, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFL014
|
Vishay Intertechnology | 类似代替 | SOT-223-3 |
MOSFET N-CH 60V 2.7A SOT223
|
||
IRFL014
|
Vishay Siliconix | 类似代替 | SOT-223-3 |
MOSFET N-CH 60V 2.7A SOT223
|
||
IRFL014TR
|
VISHAY | 完全替代 | SOT-223 |
MOSFET N-CH 60V 2.7A SOT223
|
||
IRFL014TRPBF
|
VISHAY | 完全替代 | TO-261-4 |
MOSFET N-CH 60V 2.7A SOT223
|
||
IRFL014TRPBF
|
International Rectifier | 完全替代 | SOT-223-3 |
MOSFET N-CH 60V 2.7A SOT223
|
||
IRFL014TRPBF
|
Vishay Siliconix | 完全替代 | TO-261-4 |
MOSFET N-CH 60V 2.7A SOT223
|
||
IRFL014TRPBF
|
Vishay Semiconductor | 完全替代 | SOT-223-3 |
MOSFET N-CH 60V 2.7A SOT223
|
||
NDT3055L
|
ON Semiconductor | 功能相似 | TO-261-4 |
FAIRCHILD SEMICONDUCTOR NDT3055L 晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 1.6 V
|
||
NTF3055L108T1G
|
Rochester | 功能相似 |
N 通道功率 MOSFET，60V，ON Semiconductor
|
|||
STN3NF06L
|
ST Microelectronics | 功能相似 | TO-261-4 |
STMICROELECTRONICS STN3NF06L 晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 2.8 V
|
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