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Description N-channel 60 V 0.1 Ohm Enhanced Mode Field Effect Transistor - SOT-223
Product QR code
Packaging TO-261-4
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.08  yuan 2.08yuan
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(1900) Minimum order quantity(1)
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Technical parameters/number of pins:

4

 

Technical parameters/drain source resistance:

0.07 Ω

 

Technical parameters/dissipated power:

3 W

 

Technical parameters/threshold voltage:

1.6 V

 

Technical parameters/drain source voltage (Vds):

60 V

 

Technical parameters/rise time:

7.5 ns

 

Technical parameters/Input capacitance (Ciss):

345pF @25V(Vds)

 

Technical parameters/rated power (Max):

1.1 W

 

Technical parameters/descent time:

7 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/dissipated power (Max):

3000 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

4

 

Encapsulation parameters/Encapsulation:

TO-261-4

 

Dimensions/Length:

6.5 mm

 

Dimensions/Width:

3.56 mm

 

Dimensions/Height:

1.6 mm

 

Dimensions/Packaging:

TO-261-4

 

Physical parameters/operating temperature:

-65℃ ~ 150℃

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Power management, motor drive and control, automotive use

 

Compliant with standards/RoHS standards:

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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NDT3055 NDT3055 Fairchild 功能相似 TO-261-4
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NDT3055 NDT3055 National Semiconductor 功能相似
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NDT3055 NDT3055 ON Semiconductor 功能相似 TO-261-4
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NDT3055L NDT3055L ON Semiconductor 类似代替 TO-261-4
FAIRCHILD SEMICONDUCTOR NDT3055L 晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 1.6 V
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