Technical parameters/number of pins: | 4 |
|
Technical parameters/drain source resistance: | 0.07 Ω |
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Technical parameters/dissipated power: | 3 W |
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Technical parameters/threshold voltage: | 1.6 V |
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Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/rise time: | 7.5 ns |
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Technical parameters/Input capacitance (Ciss): | 345pF @25V(Vds) |
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Technical parameters/rated power (Max): | 1.1 W |
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Technical parameters/descent time: | 7 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 3000 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | TO-261-4 |
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Dimensions/Length: | 6.5 mm |
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Dimensions/Width: | 3.56 mm |
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Dimensions/Height: | 1.6 mm |
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Dimensions/Packaging: | TO-261-4 |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | Power management, motor drive and control, automotive use |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Rochester | 功能相似 | SOT-223 |
FAIRCHILD SEMICONDUCTOR NDT3055 晶体管, MOSFET, N沟道, 4 A, 60 V, 100 mohm, 10 V, 3 V
|
||
NDT3055
|
Fairchild | 功能相似 | TO-261-4 |
FAIRCHILD SEMICONDUCTOR NDT3055 晶体管, MOSFET, N沟道, 4 A, 60 V, 100 mohm, 10 V, 3 V
|
||
NDT3055
|
National Semiconductor | 功能相似 |
FAIRCHILD SEMICONDUCTOR NDT3055 晶体管, MOSFET, N沟道, 4 A, 60 V, 100 mohm, 10 V, 3 V
|
|||
NDT3055
|
ON Semiconductor | 功能相似 | TO-261-4 |
FAIRCHILD SEMICONDUCTOR NDT3055 晶体管, MOSFET, N沟道, 4 A, 60 V, 100 mohm, 10 V, 3 V
|
||
NDT3055L
|
ON Semiconductor | 类似代替 | TO-261-4 |
FAIRCHILD SEMICONDUCTOR NDT3055L 晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 1.6 V
|
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