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Model NDT3055

Description ON Semiconductor Si NChannel MOSFET NDT3055, 4 A, Vds=60 V, 3-pin+solder SOT-223 package

Brand: ON Semiconductor

Packaging TO-261-4

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	4
Technical parameters/drain source resistance:	0.1 Ω
Technical parameters/dissipated power:	3 W
Technical parameters/threshold voltage:	3 V
Technical parameters/drain source voltage (Vds):	60 V
Technical parameters/rise time:	18 ns
Technical parameters/Input capacitance (Ciss):	250pF @30V(Vds)
Technical parameters/rated power (Max):	1.1 W
Technical parameters/descent time:	30 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/dissipated power (Max):	3 W
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	4
Encapsulation parameters/Encapsulation:	TO-261-4
Dimensions/Length:	6.7 mm
Dimensions/Width:	3.7 mm
Dimensions/Height:	1.7 mm
Dimensions/Packaging:	TO-261-4
Physical parameters/operating temperature:	-65℃ ~ 150℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Power management, consumer electronics products
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:	Lead Free

Alternative material

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NDT3055L	ON Semiconductor	功能相似	TO-261-4	N沟道 60 V 0.1 Ohm 增强模式场效应晶体管 - SOT-223	PDF
STN3NF06L	ST Microelectronics	功能相似	TO-261-4	STMICROELECTRONICS STN3NF06L 晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 2.8 V	PDF