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Model NDT3055
Description FAIRCHILD SEMICONDUCTOR NDT3055 Transistor, MOSFET, N-channel, 4 A, 60 V, 100 Mohm, 10 V, 3 V
Product QR code
Brand: Fairchild
Packaging TO-261-4
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
7.26  yuan 7.26yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6621) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

60.0 V

 

Technical parameters/rated current:

3.70 A

 

Technical parameters/number of pins:

4

 

Technical parameters/drain source resistance:

100 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

3 W

 

Technical parameters/threshold voltage:

3 V

 

Technical parameters/drain source voltage (Vds):

60 V

 

Technical parameters/Leakage source breakdown voltage:

60.0 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

4.00 A

 

Technical parameters/rise time:

18 ns

 

Technical parameters/Input capacitance (Ciss):

250pF @30V(Vds)

 

Technical parameters/rated power (Max):

1.1 W

 

Technical parameters/descent time:

30 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/dissipated power (Max):

3W (Ta)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

4

 

Encapsulation parameters/Encapsulation:

TO-261-4

 

Dimensions/Length:

6.7 mm

 

Dimensions/Width:

3.7 mm

 

Dimensions/Height:

1.7 mm

 

Dimensions/Packaging:

TO-261-4

 

Physical parameters/operating temperature:

-65℃ ~ 150℃

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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