Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/packaging: SOT-223
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFL014
|
Vishay Intertechnology | 类似代替 | SOT-223-3 |
MOSFET N-CH 60V 2.7A SOT223
|
||
IRFL014
|
Vishay Siliconix | 类似代替 | SOT-223-3 |
MOSFET N-CH 60V 2.7A SOT223
|
||
IRFL014TR
|
VISHAY | 完全替代 | SOT-223 |
MOSFET N-CH 60V 2.7A SOT223
|
||
IRFL014TRPBF
|
VISHAY | 完全替代 | TO-261-4 |
MOSFET N-CH 60V 2.7A SOT223
|
||
IRFL014TRPBF
|
International Rectifier | 完全替代 | SOT-223-3 |
MOSFET N-CH 60V 2.7A SOT223
|
||
IRFL014TRPBF
|
Vishay Siliconix | 完全替代 | TO-261-4 |
MOSFET N-CH 60V 2.7A SOT223
|
||
IRFL014TRPBF
|
Vishay Semiconductor | 完全替代 | SOT-223-3 |
MOSFET N-CH 60V 2.7A SOT223
|
||
NDT3055L
|
ON Semiconductor | 功能相似 | TO-261-4 |
FAIRCHILD SEMICONDUCTOR NDT3055L 晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 1.6 V
|
||
NTF3055L108T1G
|
Rochester | 功能相似 |
N 通道功率 MOSFET,60V,ON Semiconductor
|
|||
STN3NF06L
|
ST Microelectronics | 功能相似 | TO-261-4 |
STMICROELECTRONICS STN3NF06L 晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 2.8 V
|
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