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Specification parameters
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Technical parameters/rated power:

2 W

Technical parameters/number of pins:

Technical parameters/drain source resistance:

0.105 Ω

Technical parameters/polarity:

P-CH

Technical parameters/dissipated power:

2 W

Technical parameters/threshold voltage:

1 V

Technical parameters/drain source voltage (Vds):

55 V

Technical parameters/Continuous drain current (Ids):

3.4A

Technical parameters/rise time:

10 ns

Technical parameters/Input capacitance (Ciss):

690pF @25V(Vds)

Technical parameters/rated power (Max):

2 W

Technical parameters/descent time:

22 ns

Technical parameters/operating temperature (Max):

150 ℃

Technical parameters/operating temperature (Min):

-55 ℃

Technical parameters/dissipated power (Max):

2 W

Encapsulation parameters/installation method:

Surface Mount

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

SOIC-8

Dimensions/Length:

5 mm

Dimensions/Width:

4 mm

Dimensions/Height:

1.5 mm

Dimensions/Packaging:

SOIC-8

Physical parameters/materials:

Silicon

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

Other/Product Lifecycle:

Not Recommended for New Designs

Other/Packaging Methods:

Tube

Other/Manufacturing Applications:

Power Management, power management

Compliant with standards/RoHS standards:

RoHS Compliant

Compliant with standards/lead standards:

Lead Free

Compliant with standard/REACH

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
94-3449	Infineon	完全替代	SOIC-8	MOSFET 2P-CH 55V 3.4A 8-SOIC	PDF
AUIRF7342QTR	Infineon	类似代替	SOIC-8	双路场效应管, MOSFET, 双P沟道, -3.4 A, -55 V, 0.095 ohm, -10 V, -3 V
AUIRF7342QTR	Infineon	类似代替	SOIC-8	双路场效应管, MOSFET, 双P沟道, -3.4 A, -55 V, 0.095 ohm, -10 V, -3 V	PDF
IRF7342TRPBF	Infineon	类似代替	SOIC-8	INFINEON IRF7342TRPBF 双路场效应管, MOSFET, 双P沟道, -3.4 A, -55 V, 0.095 ohm, -10 V, -1 V
IRF7342TRPBF	IFA	类似代替		INFINEON IRF7342TRPBF 双路场效应管, MOSFET, 双P沟道, -3.4 A, -55 V, 0.095 ohm, -10 V, -1 V

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ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
Tel: +86-0755-82866643