Technical parameters/rated power: | 2 W |
|
Technical parameters/number of pins: | 8 |
|
Technical parameters/drain source resistance: | 0.095 Ω |
|
Technical parameters/polarity: | Dual P-Channel |
|
Technical parameters/dissipated power: | 2 W |
|
Technical parameters/threshold voltage: | 3 V |
|
Technical parameters/Input capacitance: | 690 pF |
|
Technical parameters/drain source voltage (Vds): | 55 V |
|
Technical parameters/Continuous drain current (Ids): | 3.4A |
|
Technical parameters/rise time: | 10 ns |
|
Technical parameters/Input capacitance (Ciss): | 690pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 2 W |
|
Technical parameters/descent time: | 22 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 2 W |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | SOIC-8 |
|
Dimensions/Length: | 5 mm |
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Dimensions/Width: | 3.9 mm |
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Dimensions/Height: | 1.75 mm |
|
Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Manufacturing Applications: | Solenoid Injection, Port Injection |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7342PBF
|
Infineon | 类似代替 | SOIC-8 |
INFINEON IRF7342PBF 双路场效应管, MOSFET, 双P沟道, 3.4 A, -55 V, 105 mohm, -10 V, -1 V
|
||
IRF7342TRPBF
|
Infineon | 类似代替 | SOIC-8 |
INFINEON IRF7342TRPBF 双路场效应管, MOSFET, 双P沟道, -3.4 A, -55 V, 0.095 ohm, -10 V, -1 V
|
||
IRF7342TRPBF
|
IFA | 类似代替 |
INFINEON IRF7342TRPBF 双路场效应管, MOSFET, 双P沟道, -3.4 A, -55 V, 0.095 ohm, -10 V, -1 V
|
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