Technical parameters/rated power: 2 W
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.095 Ω
Technical parameters/polarity: Dual P-Channel
Technical parameters/dissipated power: 2 W
Technical parameters/threshold voltage: 3 V
Technical parameters/input capacitance: 690 pF
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/Continuous drain current (Ids): 3.4A
Technical parameters/rise time: 10 ns
Technical parameters/Input capacitance (Ciss): 690pF @25V(Vds)
Technical parameters/rated power (Max): 2 W
Technical parameters/descent time: 22 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.75 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Solenoid Injection, Port Injection
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7342PBF
|
Infineon | 类似代替 | SOIC-8 |
INFINEON IRF7342PBF 双路场效应管, MOSFET, 双P沟道, 3.4 A, -55 V, 105 mohm, -10 V, -1 V
|
||
IRF7342TRPBF
|
Infineon | 类似代替 | SOIC-8 |
INFINEON IRF7342TRPBF 双路场效应管, MOSFET, 双P沟道, -3.4 A, -55 V, 0.095 ohm, -10 V, -1 V
|
||
IRF7342TRPBF
|
IFA | 类似代替 |
INFINEON IRF7342TRPBF 双路场效应管, MOSFET, 双P沟道, -3.4 A, -55 V, 0.095 ohm, -10 V, -1 V
|
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