Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/Input capacitance (Ciss): 690pF @25V(Vds)
Technical parameters/rated power (Max): 2 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7342PBF
|
Infineon | 完全替代 | SOIC-8 |
INFINEON IRF7342PBF 双路场效应管, MOSFET, 双P沟道, 3.4 A, -55 V, 105 mohm, -10 V, -1 V
|
||
IRF7342TRPBF
|
Infineon | 完全替代 | SOIC-8 |
INFINEON IRF7342TRPBF 双路场效应管, MOSFET, 双P沟道, -3.4 A, -55 V, 0.095 ohm, -10 V, -1 V
|
||
IRF7342TRPBF
|
IFA | 完全替代 |
INFINEON IRF7342TRPBF 双路场效应管, MOSFET, 双P沟道, -3.4 A, -55 V, 0.095 ohm, -10 V, -1 V
|
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