Technical parameters/reverse recovery time: | 30 ns |
|
Technical parameters/forward voltage (Max): | 875mV @4A |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | G-112 |
|
Dimensions/Packaging: | G-112 |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Semelab | 功能相似 | 2 |
Rectifier Diode, 1 Phase, 1Element, 6A, 150V V(RRM), Silicon
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||
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|
Semtech Corporation | 功能相似 | G-112 |
Rectifier Diode, 1 Phase, 1Element, 6A, 150V V(RRM), Silicon
|
||
|
|
Solid State Devices | 功能相似 |
Rectifier Diode, 1 Phase, 1Element, 6A, 150V V(RRM), Silicon
|
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|
Sensitron Semiconductor | 功能相似 | Case 304 |
Rectifier Diode, 1 Phase, 1Element, 6A, 150V V(RRM), Silicon
|
||
1N5811
|
EIC | 功能相似 |
Rectifier Diode, 1 Phase, 1Element, 6A, 150V V(RRM), Silicon
|
|||
1N5811US
|
Semtech Corporation | 完全替代 | SQ-MELF |
整流器 D MET 6A SFST 150V SURFACE MNT
|
||
1N5811US
|
Microsemi | 完全替代 | SQ-MELF |
整流器 D MET 6A SFST 150V SURFACE MNT
|
||
JANTX1N5811US
|
Sensitron Semiconductor | 完全替代 | MELF-B |
ESD 抑制器/TVS 二极管 D MET 6A SFST 150V HR SM
|
||
JANTX1N5811US
|
Semtech Corporation | 完全替代 | SMD |
ESD 抑制器/TVS 二极管 D MET 6A SFST 150V HR SM
|
||
JANTXV1N5811US
|
Sensitron Semiconductor | 完全替代 | MELF-B |
ESD 抑制器/TVS 二极管 D MET 6A SFST 150V HRV SM
|
||
JANTXV1N5811US
|
Aeroflex | 完全替代 |
ESD 抑制器/TVS 二极管 D MET 6A SFST 150V HRV SM
|
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