Technical parameters/forward voltage: | 0.875 V |
|
Technical parameters/reverse recovery time: | 30 ns |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | G-112 |
|
Dimensions/Packaging: | G-112 |
|
Physical parameters/operating temperature: | -65℃ ~ 175℃ |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Semelab | 功能相似 | 2 |
无空隙 - 密封式超快恢复整流二极管玻璃 VOIDLESS - HERMETICALLY- SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS
|
||
|
|
Semtech Corporation | 功能相似 | G-112 |
无空隙 - 密封式超快恢复整流二极管玻璃 VOIDLESS - HERMETICALLY- SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS
|
||
|
|
Solid State Devices | 功能相似 |
无空隙 - 密封式超快恢复整流二极管玻璃 VOIDLESS - HERMETICALLY- SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS
|
|||
|
|
Sensitron Semiconductor | 功能相似 | Case 304 |
无空隙 - 密封式超快恢复整流二极管玻璃 VOIDLESS - HERMETICALLY- SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS
|
||
1N5811
|
EIC | 功能相似 |
无空隙 - 密封式超快恢复整流二极管玻璃 VOIDLESS - HERMETICALLY- SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS
|
|||
1N5811E3
|
Microsemi | 功能相似 | B |
Diode Switching 150V 6A 2Pin Case E
|
||
|
|
Sensitron Semiconductor | 完全替代 | Case 304 |
Diode Switching Diode 150V 6A 2Pin Case G-112
|
||
|
|
Aeroflex | 完全替代 | 2 |
Diode Switching Diode 150V 6A 2Pin Case G-112
|
||
JANTX1N5811
|
Semtech Corporation | 完全替代 | G-112 |
Diode Switching Diode 150V 6A 2Pin Case G-112
|
||
JANTXV1N5811
|
Sensitron Semiconductor | 完全替代 | Case 304 |
ESD 抑制器/TVS 二极管 D MET 6A SFST 150V HRV 6FFTV
|
||
JANTXV1N5811
|
Semtech Corporation | 完全替代 | G-112 |
ESD 抑制器/TVS 二极管 D MET 6A SFST 150V HRV 6FFTV
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review