Technical parameters/forward voltage: 0.875 V
Technical parameters/reverse recovery time: 30 ns
Technical parameters/forward current: 6000 mA
Technical parameters/forward current (Max): 6 A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: Case 304
External dimensions/packaging: Case 304
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
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Semelab | 功能相似 | 2 |
无空隙 - 密封式超快恢复整流二极管玻璃 VOIDLESS - HERMETICALLY- SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS
|
||
|
|
Semtech Corporation | 功能相似 | G-112 |
无空隙 - 密封式超快恢复整流二极管玻璃 VOIDLESS - HERMETICALLY- SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS
|
||
|
|
Solid State Devices | 功能相似 |
无空隙 - 密封式超快恢复整流二极管玻璃 VOIDLESS - HERMETICALLY- SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS
|
|||
|
|
Sensitron Semiconductor | 功能相似 | Case 304 |
无空隙 - 密封式超快恢复整流二极管玻璃 VOIDLESS - HERMETICALLY- SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS
|
||
1N5811
|
EIC | 功能相似 |
无空隙 - 密封式超快恢复整流二极管玻璃 VOIDLESS - HERMETICALLY- SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS
|
|||
1N5811E3
|
Microsemi | 功能相似 | B |
Diode Switching 150V 6A 2Pin Case E
|
||
|
|
Sensitron Semiconductor | 完全替代 | Case 304 |
Diode Switching Diode 150V 6A 2Pin Case G-112
|
||
|
|
Aeroflex | 完全替代 | 2 |
Diode Switching Diode 150V 6A 2Pin Case G-112
|
||
JANTX1N5811
|
Semtech Corporation | 完全替代 | G-112 |
Diode Switching Diode 150V 6A 2Pin Case G-112
|
||
JANTXV1N5811
|
Sensitron Semiconductor | 完全替代 | Case 304 |
ESD 抑制器/TVS 二极管 D MET 6A SFST 150V HRV 6FFTV
|
||
JANTXV1N5811
|
Semtech Corporation | 完全替代 | G-112 |
ESD 抑制器/TVS 二极管 D MET 6A SFST 150V HRV 6FFTV
|
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